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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION *With TO-220 package *Complement to type 2SA1008 *Low collector saturation voltage *Fast switching speed APPLICATIONS *Switching regulators *DC-DC converters *High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 Total power dissipation TC=25 Junction temperature Storage temperature 15 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 2.0 4.0 1.0 1.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1.0A ,IB=0.1A,L=1mH IC=1A; IB=0.1A IC=1A ;IB=0.1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 40 40 MIN 100 2SC2331 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 0.6 1.5 10 10 V V A A 200 Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=1.0A IB1=- IB2=0.1A RL=50A;VCCB50V 0.5 1.5 0.5 s s s hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2331 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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